Background

Flash memory is a high-speed, electrically programmable memory technology widely used throughout the computer industry. Typically, flash memory includes several different comparators that are designed based on an operational amplifier (OPAMP) circuit. An OPAMP circuit usually consists of multiple transistors and various other semiconductor devices. Compared to an isolated transistor, an OPAMP circuit is relatively complicated and takes up a larger volume of space. In addition, controlling the comparator requires adjusting several different parameters. Ideally, a comparator would be replaced with a component that is simpler, smaller, and easier to control.

Technology Overview

This technology from Farmingdale State College researchers is a Multiple Quantum Well Floating Gate Non-Volatile Memory (MQWFGNVM) that replaces the comparator circuit within the flash memory architecture. A single MQWFGNVM significantly reduces the circuit area and can be integrated more easily with other components. It is also easier and more efficient to control via its threshold voltage. A MQWFGNVM based circuit is also very simple compared to an OPAMP circuit and can be fabricated more easily and inexpensively, another important advantage over traditional OPAMP technology.

Stage of Development

Technology Readiness Level (TRL): 3 - Experimental proof of concept.

Benefits

Simple, easily integrated design.
Consumes less space compared to OPAMP technology.
Easier to control via threshold voltage.
Can be fabricated easily.

Applications

The primary application for this technology is for the manufacture of flash memory.

Opportunity

This technology is available for licensing and would be of interest to anyone involved in the manufacture of flash memory. This includes:

Flash ADC and DAC Using Multiple Quantum Well Floating Gate Non-Volatile Memory (MQWFGNVM)

Patents

IP Status

Seeking